The Effects of Ag Nanoislands on the Volatile Threshold-Switching Behaviors of Au/Ag/HfO2/Ag Nanoislands/Au Devices

Volatile threshold-switching (TS) devices have been used as selectors and to simulate neurons in neural networks. It is necessary find new ways improve their performance. The randomness of conductive filament (CF) growth the endurance are urgent issues at present. Here, we explored embedded Ag nanoislands (NIs) HfO2-based TS limit position CF facilitate its same time. Au/Ag(2 nm)/HfO2(4 nm)/Ag NIs/Au volatile exhibited forming-free characteristics with improved compared without NIs, which was ascribed enhanced localization electrical field increased oxygen vacancies HfO2 induced by NIs. A mechanism proposed explain behaviors devices. NIs thickness layers played key roles whether required forming. This work shows that use metal an effective convenient way performance